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PRELIMINARY SFT10000/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET APPLICATION NOTES: SFT10000 Darlington Transistor is direct replacement of Motorolla MJ 10000. It is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: * Switching Regulators * Inverters * Solenoid and Relay Drives * Motor Controls * Deflection Cirsuits. 20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR TO-3 MAXIMUM RATINGS Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dissipation Derate above 25oC Operating and Storage Temperature Thermal Resistance, Junction to Case CASE OUTLINE: TO-3 Pin Out: 1 - Collector 2 - Base 3 - Emmiter @ TC = 25oC @ TC = 100oC Continuous Peak SYMBOL VCEO VCEV V EB IC I CM IB PD VALUE 350 450 8 20 30 2.5 175 100 1 -65 to +200 1 UNITS Volts Volts Volts Amps Amps W W W/oC o o TJ, TSTG R 2JC C C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0011A PRELIMINARY SFT10000/3 SOLID STATE DEVICES, INC. ELECTRICAL CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 250mA, IB = 0, VCLAMP = Rated VCEO) Collector-Emitter Sustaining Voltage (VCLAMP = Rated VCEX, TC = 100oC) Collector Cutoff Current (VCE = Rated Value, VBE(off) = 1.5VDC) Collector Cutoff Current (VCEV = Rated VCEV, RBE = 50S, TC = 100oC) Emitter Cutoff Current (VEB = 8VDC, IC = 0) DC Current Gain* (VCE = 5VDC) IC = 5ADC IC = 10ADC IC = 2 A IC = 10 A TC = 25oC TC = 100oC 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 SYMBOL V CEO(sus) VCEX(sus) I CBO MIN 350 400 275 - MAX 0.25 5.0 UNITS VDC VDC mADC mADC mADC ICEV IEBO HFE 50 40 10 100 - 5 150 600 400 1.9 3.0 2.0 2.5 2.5 5.0 325 0.2 0.6 3.5 2.4 5.5 3.7 Collector-Emitter Saturation Voltage* IC = 10ADC, IB = 400mADC, TC = 25oC IC = 20ADC, IB = 1ADC, TC = 25oC IC = 10ADC, IB = 400mADC, TC = 100oC Base-Emitter Saturation Voltage* (IC = 10ADC, IB = 400mADC) Diode Forward Voltage (IF = 10ADC) Small Signal Current Gain (IC = 1ADC , VCE = 10VDC, f = 1MHz) Output Capacitance (VCB= 30VDC , IE = 0ADC, f = 2.0MHz) Delay Time Rise Time Storage Time Fall Time Storage Time Crossover Time IC = 10A(pk), VCLAMP = Rated VCEX, IB1 = 400mA, VBE(off) = 5VDC, TC = 100oC VCC = 250VDC , IC = 10ADC, IB1 = 400mADC, VBE(off) = 5VDC tP = 50:sec, Duty Cycle # 2% TC = 25oC TC = 100oC VCE(SAT) VDC VBE (SAT) VF HFE Cob td tr ts tf t sv tc VDC VDC pf :s :s :s :s :s :s *Pulse Test: Pulse Width = 300us, Duty Cycle = 2% |
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